Very short wavelength semiconductor laser

Details Very short wavelength semiconductor laser Very short wavelength semiconductor laser

1993-07-27

1994-07-19

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

053316568

ABSTRACT:
A laser device, for example, a diode, is provided which has an oscillation wavelength shorter than 600 nm by using III-V semiconductor materials. This is achieved by using nitrogen doping with GaInP material on a GaP substrate to increase the critical layer thickness of the strained layer. As one example, the following layers can be epitaxially-grown in order on an n-type GaP substrate 1 by a molecular beam epitaxy (MBE) method: a Si-doped n-type Al.sub.y Ga.sub.l-y P optical waveguide layer; a multiple quantum well layer made by repeatedly forming four nitrogen-doped Ga.sub.x1 In.sub.1-x1 P quantum barrier layers and three nitrogen-doped Ga.sub.x2 In.sub.1-x2 P quantum well layers; a Zn-doped p-type Al.sub.y Ga.sub.1-y P optical waveguide layer; a Zn-doped p-type Ga.sub.x3 In.sub.1-x3 P thin layer; and a Zn-doped p-type Al.sub.y Ga.sub.1-y P optical waveguide layer. Next, the thin Ga.sub.x3 In.sub.1-x3 P layer is processed to form a ridge stripe. Then, an n-type Gap current constriction layer is selectively grown and a p-electrode and an n-electrode are formed. Using such a structure, it is possible to obtain a yellow laser element having a threshold current of 100 to 150 mA and an oscillation wavelength of 565 to 580 nm controlled in the transverse mode under continuous-wave (CW) room-temperature operation. Other embodiments use either a single quantum well layer or superlattice layers to obtain either yellow-green light or orange light of very short wavelengths.

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patent: 5095488 (1992-03-01), Yamamoto et al.
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