Very low pressure chemical vapor deposition process for depositi

Details Very low pressure chemical vapor deposition process for depositi Very low pressure chemical vapor deposition process for depositi

1989-10-12

1990-09-18

Childs, Sadie

Coating processes

Electrical product produced

Welding electrode

427255, 4272552, 437200, 437225, B05D 306, C23C 1642

Patent

active

049577778

ABSTRACT:
The selective or blanket deposition of titanium silicide using a Very Low Pressure Chemical Vapor Deposition process is described. Silane and titanium tetrachloride are used as the silicon and titanium sources, respectively. A thin polysilicon layer is deposited prior to the silicide deposition to promote the nucleation of titanium silicide. It is shown that selective deposition is possible by controlling the polysilicon and the titanium silicide deposition times. The resulting titanium silicide films have resistivities in the range of 15-25 micro-ohms-cm.

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