Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1997-03-13
1999-12-21
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257256, 257458, H01L 2980, H01L 31112
Patent
active
06005266&
ABSTRACT:
A low leakage current monolithic InGaAs InP discrete device is provided for a focal plane array for near-infrared imaging. The array consists of a plurality of InGaAs p-i-n diodes for photodetectors, with each being integrated on a common substrate with an Inp junction field effect transistor (JFET) as a switching element for each pixel. In order to minimize the drain and gate leakage to achieve high-detection sensitivity, a p-encapsulation of an n-drained of each JFET is employed.
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Cohen Marshall J.
Forrest Stephen Ross
Kim Dong-Su
Lange Michael J.
Eckert II George C.
Saadat Mahshid
The Trustees of Princeton University
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