Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2005-12-16
2009-02-24
Vu, David Hung (Department: 2821)
Coating apparatus
Gas or vapor deposition
With treating means
C118S7230MA, C156S345410, C156S345420
Reexamination Certificate
active
07493869
ABSTRACT:
The present invention is an apparatus and method for producing very large area and large volume plasmas. The invention utilizes electron cylcotron resonances in conjunction with permanent magnets to produce dense, uniform plasmas for long life ion thruster applications or for plasma processing applications such as etching, deposition, ion milling and ion implantation. The large area source is at least five times larger than the 12-inch wafers being processed to date. Its rectangular shape makes it easier to accommodate to materials processing than sources that are circular in shape. The source itself represents the largest ECR ion source built to date. It is electrodeless and does not utilize electromagnets to generate the ECR magnetic circuit, nor does it make use of windows.
REFERENCES:
patent: 5203960 (1993-04-01), Dandl
patent: 5324362 (1994-06-01), Schneider et al.
patent: 5370765 (1994-12-01), Dandl
patent: 5707452 (1998-01-01), Dandl
patent: 6153977 (2000-11-01), Taira et al.
patent: 6322662 (2001-11-01), Ishii et al.
patent: 6376028 (2002-04-01), Laurent et al.
patent: 6830652 (2004-12-01), Ohmi et al.
patent: 7404991 (2008-07-01), Ohmi et al.
patent: 2002/0121344 (2002-09-01), Noguchi
patent: 2003/0173030 (2003-09-01), Ishii et al.
patent: 2003/0183170 (2003-10-01), Kato et al.
patent: 2004/0045674 (2004-03-01), Ishii et al.
patent: 06151092 (1994-05-01), None
patent: 06158298 (1994-06-01), None
patent: WO 91/12353 (1991-08-01), None
Foster John E.
Patterson Michael J.
Cohn Howard M.
The United States of America as represented by the Administratio
Vu David Hung
LandOfFree
Very large area/volume microwave ECR plasma and ion source does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Very large area/volume microwave ECR plasma and ion source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Very large area/volume microwave ECR plasma and ion source will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4056382