Very high sensitivity magnetic sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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Details

C257S416000, C257S415000, C257S417000, C257S418000, C257S419000, C257S420000, C324S252000, C324S247000, C324S259000, C324S263000

Reexamination Certificate

active

07038285

ABSTRACT:
A magnetic sensor includes a thin deformable membrane made of a conductive material forming a first plate of a capacitor which conducts an electric current therethrough. A second capacitor plate of the capacitor includes a doped region of a semiconductor substrate. A layer of a gaseous dielectric separates the two plates. The membrane deforms due to the effect of the Lorentz force generated by a magnetic field lying in the plane of the membrane and perpendicular to the lines of current being conducted therethrough. In addition, a process for fabricating this magnetic sensor is also provided as well as a device for measuring a magnetic field using the magnetic sensor.

REFERENCES:
patent: 4912990 (1990-04-01), Norling
patent: 5578843 (1996-11-01), Garabedian et al.
patent: 6670686 (2003-12-01), Jaouen et al.
patent: 0305978 (1989-03-01), None
patent: 99/46610 (1999-09-01), None

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