Oscillators – With distributed parameter resonator
Patent
1985-10-04
1986-12-16
Grimm, Siegfried H.
Oscillators
With distributed parameter resonator
331117FE, 331117D, 331177R, H03B 518
Patent
active
046300023
ABSTRACT:
A very high frequency oscillator (4-22 GHz) including field effect transistor and first and second YIG sphere resonators whose reactant frequencies are displaced, which gives the oscillator a wide frequency range. The first YIG sphere is doubly coupled to the source and gate of the transistor, which gives the oscillator good linearity (.perspectiveto.10.sup.-3) over its frequency range. The second YIG sphere is coupled to the gate by a coupling wire which also couples to the first YIG sphere.
REFERENCES:
patent: 3339152 (1967-08-01), Will
patent: 3879677 (1975-04-01), Arnold
patent: 4270097 (1981-05-01), LeTron et al.
Le Tron et al., "Multioctave FET Oscillators Double Tuned by a Single YIG," 1979 IEEE International Solid-State Circuits Conference, pp. 162, 163.
"Thomson-CSF"
Grimm Siegfried H.
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