Very high frequency mixer

Details Very high frequency mixer Very high frequency mixer

1988-03-01

1989-07-04

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307572, 333218, G06G 700, H03K 17687

Patent

active

048453897

ABSTRACT:
A mixer of the two-transistor type (T.sub.1, T.sub.2) arranged in series by a source S.sub.2 and a drain D.sub.1. A Gate G.sub.1 receives a radio frequency signal RF and a gate G.sub.2 a local oscillator signal L0. Matching networks R.sub.1 and R.sub.2 are provided for the respective signals RF and L0. One element of the network R.sub.3 positioned at the output (drain D.sub.2 of the transistor T.sub.2) restores a short-circuit at the frequency f.sub.L0 of the local oscillator. The instability of the input G.sub.2 of the transistor T.sub.2 is compensated for by an inductor element L inserted between the junction point of the source S.sub.2 and the drain D.sub.1 and the common-mode pole.

REFERENCES:
patent: 3523199 (1970-08-01), Phuoc et al.
patent: 4308473 (1981-12-01), Carnes
patent: 4327343 (1982-04-01), Cornish
"Dual-Gate MESFET Mixers", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-32, No. 3, Mar. 1984, by Christos Tsironis et al.
"Performance of a Dual-Gate GaAs MESFET as a Frequency Multiplier at Ku-Band", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-27, No. 5, May 1979, by Philip Chen et al.

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