Very high density punch-through read-only-memory

Details Very high density punch-through read-only-memory Very high density punch-through read-only-memory

1981-09-14

1983-02-08

Munson, Gene M.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 45, 357 67, 365105, 365175, H01L 2990, H01L 2710, G11C 1706, G11C 1136

Patent

active

043731651

ABSTRACT:
A semiconductor read-only-memory (ROM) device having an array of punch-through devices as memory cells. The cells are formed at the crossing points of two pluralities of parallel elongated regions, the two pluralities being perpendicular to each other. One plurality is located in subsurface regions of a semiconductor body and is of a conductivity type opposite that of the surrounding body. The other plurality is located at a surface of the semiconductor body and is of the same conductivity type as the subsurface plurality. The device is programmed by implanting impurities of the same conductivity type as the semiconductor body between selected crossing points. No contacts exists in the array.

REFERENCES:
patent: 4254427 (1981-03-01), Lohstroh
Lohstroh et al "Punch-Through Cell for Dense Bipolar ROMS" IEEE Int. Solid-State Circuits Conf. (2/78), Dig. Technical Papers pp. 20-21.

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