Very high density cells comprising a ROM and method of manufactu

Details Very high density cells comprising a ROM and method of manufactu Very high density cells comprising a ROM and method of manufactu

1982-07-12

1983-09-27

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 29578, 357 23VT, H01L 2122, H01L 21265

Patent

active

044060491

ABSTRACT:
The subject invention conserves memory real estate by employing ROM cells which are FETs or non-FETs depending upon the programming. Each cell comprises a gate, a source and drain region and provision for connections to bit and word lines. Programming is achieved by a mask which permits doping of the source and drain regions to comprise FETs for the cells indicative of one state of logic while precluding doping of the source and drain regions to complete the channel in the cells comprising the other state of logic. Also, the FETs are fabricated, their contacts extending linearly between bit lines which are preferably diffused lines, and the word line making direct contact with gates of the linear cells. The process simplifies the number of steps required to manufacture the FETs and non-FETs by simply providing the programming after the basic cells are formed. Such unprogrammed structures may be inventoried and simply programmed i.e. completed by selective doping and establishing of contacts to fulfill orders to customer specifications immediately.

REFERENCES:
patent: 3699646 (1972-10-01), Vadasz
patent: 4096522 (1978-06-01), Suzuki et al.
patent: 4231051 (1980-10-01), Custode et al.
patent: 4235011 (1980-11-01), Butler et al.
patent: 4280271 (1981-07-01), Lou et al.

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