Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2011-01-18
2011-01-18
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S687000, C257SE25006, C257SE25013, C257S692000, C257S685000
Reexamination Certificate
active
07872339
ABSTRACT:
Prepackaged chips, such a memory chips, are vertically stacked and bonded together with their terminals aligned. The exterior lead frames are removed including that portion which extends into the packaging. The bonding wires are now exposed on the collective lateral surface of the stack. In those areas where no bonding wire was connected to the lead frame, a bare insulative surface is left. A contact layer is disposed on top of the stack and vertical metalizations defined on the stack to connect the ends of the wires to the contact layer and hence to contact pads on the top surface of the contact layer. The vertical metalizations are arranged and configured to connect all commonly shared terminals of the chips, while the control and data input/output signals of each chip are separately connected to metalizations, which are disposed in part on the bare insulative surface.
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Albert Douglas N.
Gann Keith
Karimy Mohammad T
Smith Bradley K
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