Vertically stacked field programmable nonvolatile memory and met

Details Vertically stacked field programmable nonvolatile memory and met Vertically stacked field programmable nonvolatile memory and met

1998-11-16

2000-03-07

Nelms, David

Static information storage and retrieval

Read only systems

Semiconductive

365 63, 365 51, 365175, 365242, G11C 1700

Patent

active

060348828

ABSTRACT:
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

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