Vertically stacked field programmable nonvolatile memory and...

Details Vertically stacked field programmable nonvolatile memory and... Vertically stacked field programmable nonvolatile memory and...

2007-10-26

2010-10-19

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C257SE23147

Reexamination Certificate

active

07816189

ABSTRACT:
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

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