Vertically stacked, field programmable, nonvolatile memory...

Details Vertically stacked, field programmable, nonvolatile memory... Vertically stacked, field programmable, nonvolatile memory...

2004-05-17

2009-02-10

Le, Thao (Department: 2818)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C257SE27020

Reexamination Certificate

active

07488625

ABSTRACT:
A three-dimensional, field-programmable, non-volatile memory includes multiple layers of first and second crossing conductors. Pillars are self-aligned at the intersection of adjacent first and second crossing conductors, and each pillar includes at least an anti-fuse layer. The pillars form memory cells with the adjacent conductors, and each memory cell includes first and second diode components separated by the anti-fuse layer. The diode components form a diode only after the anti-fuse layer is disrupted.

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