Vertically oriented CVD apparatus including gas inlet tube havin

Details Vertically oriented CVD apparatus including gas inlet tube havin Vertically oriented CVD apparatus including gas inlet tube havin

1991-12-18

1993-10-12

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

With treating means

118724, 118715, 118730, C23C 1600

Patent

active

052521338

ABSTRACT:
A vertically oriented CVD apparatus comprises a reaction chamber, a boat means vertically placed in the reaction chamber to horizontally support a plurality of semiconductor substrates, and a gas inlet tube including a plurality of gas injection holes along a longitudinal axis thereof and extending along a longitudinal side of the boat means to introduce a reaction gas into the reaction chamber. In the structure, a direction of each of the gas injection holes is set at an angle .theta. with respect to a reference line given by a straight line connecting a center of the gas inlet tube to a center of one of the semiconductor wafers, the angle .theta. being defined by 0.degree. < .theta. .ltoreq. 90.degree..

REFERENCES:
patent: 4745088 (1988-05-01), Inoue et al.
patent: 4992301 (1991-02-01), Shishiguchi et al.
Stanley Wolf, Silicon Processing of the VLSI Era, 1986, p. 27.

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