Optical waveguides – Integrated optical circuit
Reexamination Certificate
2007-12-04
2007-12-04
Wong, Tim M. (Department: 2874)
Optical waveguides
Integrated optical circuit
C385S049000
Reexamination Certificate
active
11269355
ABSTRACT:
High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.
REFERENCES:
patent: 6437891 (2002-08-01), Chandrasekhar et al.
patent: 6537370 (2003-03-01), Hernandez
patent: 6635110 (2003-10-01), Luan
patent: 6825542 (2004-11-01), Lam et al.
patent: 2004/0052445 (2004-03-01), Forrest et al.
patent: 2004/0188794 (2004-09-01), Gothoskar et al.
patent: 2005/0053319 (2005-03-01), Doan
Brunner et al., “Molecular beam epitaxy growth and thermal stability of Si1-xGexlayers on extremely thin silicon-on-insulator substrates,”Thin Solid Films, Elsevier Science S.A., vol. 321 (1998), pp. 245-250.
Giovane “Strain-Balanced Silicon-Germanium Materials for Near IR Photodetection in Silicon-Based Optical Interconnects” (Ph. D. Thesis, MIT, 1998).
Jutzi et al., “Ge-on-Si Pin-Photodiodes for Vertical and In-Plane Detection of 1300 to 1580 nm Light”, Solid-State Device Research Conference, 2004, IEEE (2004) pp. 345-348.
Luan et al., Proceedings of SPIE, “Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics,” vol. 4293, pp. 118-122 (2001).
Rouviere et al., “Integration of Germanium Waveguide Photodetectors for Optical Intra-Chp Interconnects” (Proceedings of SPIE. vol. 5453, 2004).
Yoshimoto, T. et al., “SOI Waveguide GeSi Avalanche Pin Photodetector at 1.3 μm Wavelength ”, IEICE Trans. Electron., vol. E81-C, No. 10 (Oct. 1998), pp. 1667-1669.
International Search Report for Application No. PCT/US2006/020935 dated Aug. 30, 2006 (6 pages).
Patent Abstracts of Japan, Publication No. 2003/12053, Published Nov. 7, 2000 (1 page).
Ahn Donghwan
Kimerling Lionel C.
Liu Jifeng
Michel Jurgen
Goodwin & Procter LLP
Massachusetts Institute of Technology
Wong Tim M.
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