Vertically and laterally illuminated p-i-n photodiode

Details Vertically and laterally illuminated p-i-n photodiode Vertically and laterally illuminated p-i-n photodiode

1990-09-25

1991-09-03

Mintel, William

357 58, 357 55, 357 56, 357 16, 357 19, H01L 2714

Patent

active

050459082

ABSTRACT:
A method for improving efficiency of a p-i-n photodetector by having a reflector (14) reflect incident light into a receptor area (11). Receptor area (11) is increased in functional size by using reflector (14) to reflect light into the side of receptor area (11). Reflector (14) can be configured so as to act as a filtering or focusing means.

REFERENCES:
No Author, "Vertically Emitting Diode Laser with Integrated Front-Beam Monitor Photodiode," IBM Technical Disclosure Bulletin, vol. 32, No 8A, Jan. 1990, pp. 149-150.

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