Vertical unipolar component

Details Vertical unipolar component Vertical unipolar component

2006-07-18

2006-07-18

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

With means to prevent edge breakdown

C257S475000, C257S481000, C257S486000, C257S603000

Reexamination Certificate

active

07078783

ABSTRACT:
A vertical unipolar component formed in a semiconductor substrate. An upper portion of the substrate includes insulated trenches filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth being at most equal to the thickness of the upper portion.

REFERENCES:
patent: 5540977 (1996-07-01), Vogelsang et al.
patent: 6707128 (2004-03-01), Moriguchi et al.
patent: 2001/0000033 (2001-03-01), Baliga
patent: 2002/0074578 (2002-06-01), Hshieh et al.
patent: 1 170 803 (2002-01-01), None
patent: WO 02/13257 (2002-02-01), None
French Search Report from French Patent Application 03/01077, filed Jan. 30, 2003.
Patent Abstracts of Japan, vol. 013, No. 128 (E-735), Mar. 29, 1989 & JP 63 296282 A (Sony Corp.).

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