Vertical type nitride semiconductor light emitting diode

Details Vertical type nitride semiconductor light emitting diode Vertical type nitride semiconductor light emitting diode

2007-10-16

2007-10-16

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257SE33010, C257SE51018, C257SE25028

Reexamination Certificate

active

11153500

ABSTRACT:
Disclosed herein is a vertical type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises an n-type nitride semiconductor layer, an active layer formed under the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed under the active layer, and an n-side electrode which comprises a bonding pad formed adjacent to an edge of an upper surface of the n-type nitride semiconductor layer and at least one extended electrode formed in a band from the bonding pad. The bonding pad of the n-side electrode is formed adjacent to the edge of the upper surface of the n-type nitride semiconductor layer acting as a light emitting surface, thereby preventing a wire from shielding light emitted from the active layer. The extended electrode can be formed in various shapes, and prevents concentration of current density, thereby ensuring effective distribution of the current density.

REFERENCES:
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 2005/0133807 (2005-06-01), Park et al.
patent: 2006/0192206 (2006-08-01), Kong et al.
patent: 10-2005-0008259 (2005-01-01), None

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