Vertical type junction field effect semiconductor device

Details Vertical type junction field effect semiconductor device Vertical type junction field effect semiconductor device

1975-08-12

1977-08-09

Wojciechowicz, Edward J.

357 41, H01L 2980, H01L 2702

Patent

active

040415171

ABSTRACT:
A vertical type junction field effect transistor is disclosed having a body of semiconductor material of a first conductive type, a source region of the first conductive type provided in a main face of the body and a drain region of the first conductive type disposed opposite to the source region. A gate region of a second conductive type opposite to the first conductive type is disposed in direct contact with the source region and surrounds the source region in the form of a closed loop. A channel region extends from the source region towards the drain region and has a varying width in the vicinity of the source region according to the change of a depletion layer upon voltage application to the gate region.

REFERENCES:
patent: 3841917 (1974-10-01), Shannon

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