Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-03-01
2011-03-01
Shingleton, Michael B (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S511000, C438S149000, C438S311000
Reexamination Certificate
active
07898008
ABSTRACT:
A bipolar device is integrated in an active layer, wherein delimitation trenches surround respective active areas housing bipolar transistors of complementary types. Each active area accommodates a buried layer; a well region extending on top of the buried layer; a top sinker region extending between the surface of the device and the well region; a buried collector region extending on top of the well region and laterally with respect to the top sinker region; a base region, extending on top of the buried collector region laterally with respect to the top sinker region; and an emitter region extending inside the base region. The homologous regions of the complementary transistors have a similar doping level, being obtained by ion-implantation of epitaxial layers wherein the concentration of dopant added during the growth is very low, possibly zero.
REFERENCES:
patent: 5602417 (1997-02-01), Villa
patent: 5828124 (1998-10-01), Villa
patent: 2003/0155631 (2003-08-01), Nelle et al.
patent: 2008/0017895 (2008-01-01), Fallica et al.
Fallica Piero Giorgio
Modica Roberto
Jorgenson Lisa K.
Kading Joshua A.
Seed IP Law Group PLLC
Shingleton Michael B
STMicroelectronics S.r.l.
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