Coating apparatus – Gas or vapor deposition – With treating means
Patent
1991-03-26
1994-01-18
Hearn, Brian E.
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118724, C23C 1600
Patent
active
052796701
ABSTRACT:
An oxidation apparatus for applying oxidation treatment to a plurality of semiconductor wafers includes a vertical-type reaction tube in which the wafers are housed, and an outer tube coaxially located outside the reaction tube with a space interposed between them. A heater is located enclosing the outer tube. The space between both of the tubes serves as a passage for pre-heating a treating gas passing through the space. A pipe for supplying the treating gas into the space is connected to the lower portion of the outer tube. A diffusion plate is formed at the top of the reaction tube and it is provided with a plurality of diffusion holes through which the treating gas is introduced into the reaction tube after the gas passes through the space. The space between both of the tubes is partitioned by a spiral pipe made of quartz and the gas pre-heating passage is thus formed spiral extending from the gas supply pipe to the diffusion plate. A pipe for discharging the treating gas outside the reaction tube is connected to the lower portion of the reaction tube.
REFERENCES:
patent: 4096822 (1978-06-01), Yamanaki et al.
patent: 4798165 (1989-01-01), deBoer et al.
patent: 4989540 (1991-02-01), Fuse et al.
patent: 5146869 (1992-09-01), Bohannon et al.
Okase Wataru
Watanabe Singo
Baskin Jonathan D.
Hearn Brian E.
Tokyo Electron Sagami Limited
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