Vertical type construction transistor

Details Vertical type construction transistor Vertical type construction transistor

1992-07-02

1994-09-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

257163, 257579, 257587, H01L 2944, H01L 2970

Patent

active

053492390

ABSTRACT:
A vertical type construction transistor is provided wherein a bump electrode is disposed immediately on the junction portions formed on the surface of the semiconductor basic plate so as to effect a radiating operation with the electrode being connected to a heat sink. As a result the heating of the junction portion formed on the basic plate surface is effectively released, the inductance of the outgoing line is reduced, and the power amplification used in the microwave band is put to practical use.

REFERENCES:
patent: 3585461 (1971-06-01), Eynon et al.
patent: 3686698 (1972-08-01), Akeyama et al.
patent: 4054898 (1977-10-01), Streit et al.
L. F. Miller, IBM J. Res. Develop., May 1969 pp. 239-250.
S. E. Scrupski, Electronics, Feb. 1, 1971, pp. 44-48.
T. Kawanobe et al, Proc. 33rd ECC, 1983, pp. 221-226.
T. R. Myers, Proc. ECC, 1969, pp. 131-144.

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