Vertical type bipolar transistor

Details Vertical type bipolar transistor Vertical type bipolar transistor

1994-04-05

1996-05-21

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257588, 257592, H01L 2970, H01L 27082, H01L 27102

Patent

active

055192491

ABSTRACT:
A semiconductor device having a monocrystalline semiconductor layer, a first insulating film, a base leading electrode, and a second insulating film is arranged such that a predetermined pattern window is provided in the second insulating film, a third insulating film of silicon oxide is provided between two peripheries of the predetermined pattern window, a first window is provided between a side of the second insulating film and a side of the third insulating film, a second window extends from the first window and is larger than the first window so that the base leading electrode and the third insulating film have overhang portions, first spacers are provided respectively in alignment with the peripheries of the predetermined pattern window and in alignment with the sides of the third insulating film, second spacers cover the first spacers and the overhang portions, and emitter layers are provided between and in self-alignment with the second spacers. The width of the emitter layer is determined by the opening width of the first window and the widths of the first and the second spacers.

REFERENCES:
patent: 5321301 (1994-06-01), Sato et al.
patent: 5323032 (1994-06-01), Sato et al.
Sze; "Semiconductor Devices Physics and Technology"; pp. 371-372; 1985.
F. Sato et al., "A Self-Aligned Selective MBE Technology For High-Performance Bipolar Transistors," IEDM Technical Digest, pp. 607-610 (1990).

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