Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-08-13
2010-12-07
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S022000, C257S024000
Reexamination Certificate
active
07847282
ABSTRACT:
The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the quantum dot is substantially perpendicular to the substrate. A gate may be disposed so that an axis through the channel, the quantum dot and the gate is substantially perpendicular to the substrate.
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Fletcher Yoder
Micron Technologies, Inc
Pham Long
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