Vertical tunneling transistor

Details Vertical tunneling transistor Vertical tunneling transistor

2005-09-01

2008-08-19

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S022000, C257S024000

Reexamination Certificate

active

07414260

ABSTRACT:
The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the quantum dot is substantially perpendicular to the substrate. A gate may be disposed so that an axis through the channel, the quantum dot and the gate is substantially perpendicular to the substrate.

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