Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-04-11
2006-04-11
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S020000, C257S022000, C257S024000
Reexamination Certificate
active
07026642
ABSTRACT:
The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the quantum dot is substantially perpendicular to the substrate. A gate may be disposed so that an axis through the channel, the quantum dot and the gate is substantially perpendicular to the substrate.
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Fletcher Yoder
Pham Long
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