Vertical transistor device fabricated with semiconductor regrowt

Details Vertical transistor device fabricated with semiconductor regrowt Vertical transistor device fabricated with semiconductor regrowt

1988-02-02

1990-02-20

Larkins, William D.

Fishing, trapping, and vermin destroying

357 15, 357 55, 437 29, H01L 2980

Patent

active

049030892

ABSTRACT:
A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.

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Adachi et al., IEEE Electron Device Letters, EDL-6, No. 6, 264-266 (1985).
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Frensley et al., IEEE Trans. Electron Devices, ED-32 (5), 952-956.
Mishra et al., IEDM Tech. Dig. 594-597 (1982).
Tang et al., Proceedings IEEE/Cornell Conference on High-Speed Semiconductor Devices & Circuits 250-259 (1983).

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