Vertical transistor device fabricated with semiconductor regrowt

Details Vertical transistor device fabricated with semiconductor regrowt Vertical transistor device fabricated with semiconductor regrowt

1990-02-16

1992-04-21

Saba, William G.

Fishing, trapping, and vermin destroying

148DIG26, 148DIG50, 148DIG88, 148DIG142, 437 84, 437175, 437911, 156643, 156644, 156653, 156657, 357 15, 357 22, 357 55, H01L 2120, H01L 2118, H01L 2195

Patent

active

051067781

ABSTRACT:
A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.

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