Vertical-to-surface transmission electro-photonic device with io

Coherent light generators – Particular active media – Semiconductor

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372 96, H01S 318

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active

055008682

ABSTRACT:
The invention provides a vertical-to-surface transmission electro-photonic semiconductor device with a mesa structure of light reflective multiple layers in which the device includes a high resistive region for a carrier confinement. The high resistive region is formed by an ion-implantation of proton in a downward oblique direction during a rotation of a semiconductor substrate with use of a photo-resist mask whose horizontal width is larger than that of the mesa structure. The high resistive region defines a light emitting area of an active layer, an inverse circular truncated cone like definition of a top cladding region and a circular truncated cone like definition of a bottom cladding region. The oblique angle ion-implantation permits the top cladding region to be free from any exposure of the ion-implantation thereby an electrical resistance of the device is reduced.

REFERENCES:
patent: 5274655 (1993-12-01), Shieh et al.
By K. Kurihara et al., "High Electronic-Optical Conversion Efficiency in a Vertical Surface Transmission Electro-Photonic Device with a Vertical Cavity", The Japanese Society of Applied Physics, 1992, pp. 598-600. (No month available).
By H. Yoo et al., "Fabrication of Vertical-Cavity Front-Surface-Emitting Laser Diode (FSELD) Using a Heterojunction Bipolar Transistor Process", Japanese Journal of Applied Physics, Mar. 1991, vol. 30, No. 3B, pp. 492-494.
By K. Kurihara et al., "Double-Mesa-Structure Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity", Japanese Journal of Applied Physics, 1993, vol. 32, No. 1B, pp. 604-608. (Jan.).

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