Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1995-06-07
1997-06-10
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 45, 438525, H01L 3118
Patent
active
056375115
ABSTRACT:
The invention provides a vertical-to-surface transmission electro-photonic semiconductor device with a mesa structure of light reflective multiple layers in which the device includes a high resistive region for a carrier confinement. The high resistive region is formed by an ion-implantation of proton in a downward oblique direction during a rotation of a semiconductor substrate with use of a photo-resist mask whose horizontal width is larger than that of the mesa structure. The high resistive region defines a light emitting area of an active layer, an inverse circular truncated cone like definition of a top cladding region and a circular truncated cone like definition of a bottom cladding region. The oblique angle ion-implantation permits the top cladding region to be free from any exposure of the ion-implantation thereby an electrical resistance of the device is reduced.
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Kurihara, K., et al., "High Electronic-Optical Conversion Efficiency in a Vertical to Surface Transmission Electro-Photonic Device with a Vertical Cavity", The Japan Society of Applied Physics, 1992, pp. 598-600. (Aug.).
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Kurihara, K., et al., "Double-Mesa-Structure Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity", Japanese Journal of Applied Physics, vol. 32, No. 1B, 1993, pp. 604-608. (Jan.).
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