Vertical-to-surface optical semiconductor device and apparatus f

Details Vertical-to-surface optical semiconductor device and apparatus f Vertical-to-surface optical semiconductor device and apparatus f

1993-09-22

1994-11-15

Davie, James W.

Coherent light generators

Particular resonant cavity

372 20, 372 45, H01S 319

Patent

active

053655400

ABSTRACT:
A vertical cavity of a rectangular shape having short and long sides is defined between first and second mirror layers. Thus, two resonant wavelengths are obtained in a vertical-to-surface optical semiconductor device having the vertical cavity. The resonant wavelengths are shifted in a long wavelength direction due to the heat generated in operation of the optical semiconductor device. A light of the shifted short wavelength emitted from the first optical semiconductor device is rotated in polarization plane by 90.degree., and is then received as a light of the non shifted long wavelength by the second optical semiconductor device.

REFERENCES:
patent: 5023944 (1991-06-01), Bradley
patent: 5029176 (1991-07-01), Chang-Hasnian
patent: 5068869 (1991-11-01), Wang et al.
patent: 5086430 (1992-02-01), Kapon et al.
C. Chang-Hasnain et al., "Dyamic, Polarization and Transverse Mode Characteristics of Vertical Cavity Surface Emitting Lasers", Jun. 1991, vol. 27, No. 6, IEEE Journal of Quantum Electronics, pp. 1402-1409.
M. Shimizu et al., "A Method of Polarization Stabilization in Surface Emitting Lasers", Jun. 1991, vol. 30, No. 6A, Japanese Journal of Applied Physics, pp. 1015-1017.
T. Mukaihara et al., "Stress Effect for Polarisation Control of Surface Emitting Lasers", Mar. 12, 1992, vol. 288, No. 6, Electronic Letters, p. 555.
Ichiro Ogura et al, "Cascadable optical switching characteristics in vertical-to-surface transmission electrophotonic devices operated as vertical cavity lasers" Feb. 17, 1992, pp. 799-801, 1992 American Institute of Physics.

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