Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Reexamination Certificate
2006-02-03
2008-10-14
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
C257SE29211, C438S133000
Reexamination Certificate
active
07436003
ABSTRACT:
A vertical thyristor for ESD protection comprises an anode (10), a cathode (16), a first gate electrode (12) and a second gate electrode (14). The first (12) and second (14) gate electrodes are arranged between the anode (10) and the cathode (16), wherein the first gate electrode (12) is an epitaxial silicon layer (20) formed upon the anode (10) and the second gate electrode (14) is an epitaxial silicon-germanium layer (24) formed upon the first gate electrode (12). The method of fabricating such a vertical thyristor comprises the steps of depositing an epitaxial silicon layer (20) upon the anode (10) and depositing an epitaxial silicon-germanium layer (24) upon the epitaxial silicon layer (20), wherein the epitaxial silicon layer (20) forms the first gate electrode (12) and the epitaxial silicon-germanium layer (24) forms the second gate electrode (14) of the vertical thyristor.
REFERENCES:
patent: 5815359 (1998-09-01), Maytum et al.
patent: 6770918 (2004-08-01), Russ et al.
patent: 6780725 (2004-08-01), Fujimaki
patent: 6803259 (2004-10-01), Lee
patent: 2007/0023866 (2007-02-01), Chatty et al.
patent: 38 35 569 (1990-05-01), None
Jumpertz Reiner
Schimpf Klaus
Brady III W. James
Dang Trung
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Vertical thyristor for ESD protection and a method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vertical thyristor for ESD protection and a method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical thyristor for ESD protection and a method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3992741