Vertical thyristor for ESD protection and a method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device

Reexamination Certificate

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C257SE29211, C438S133000

Reexamination Certificate

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07436003

ABSTRACT:
A vertical thyristor for ESD protection comprises an anode (10), a cathode (16), a first gate electrode (12) and a second gate electrode (14). The first (12) and second (14) gate electrodes are arranged between the anode (10) and the cathode (16), wherein the first gate electrode (12) is an epitaxial silicon layer (20) formed upon the anode (10) and the second gate electrode (14) is an epitaxial silicon-germanium layer (24) formed upon the first gate electrode (12). The method of fabricating such a vertical thyristor comprises the steps of depositing an epitaxial silicon layer (20) upon the anode (10) and depositing an epitaxial silicon-germanium layer (24) upon the epitaxial silicon layer (20), wherein the epitaxial silicon layer (20) forms the first gate electrode (12) and the epitaxial silicon-germanium layer (24) forms the second gate electrode (14) of the vertical thyristor.

REFERENCES:
patent: 5815359 (1998-09-01), Maytum et al.
patent: 6770918 (2004-08-01), Russ et al.
patent: 6780725 (2004-08-01), Fujimaki
patent: 6803259 (2004-10-01), Lee
patent: 2007/0023866 (2007-02-01), Chatty et al.
patent: 38 35 569 (1990-05-01), None

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