Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2004-07-01
2008-11-25
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S147000, C257S155000, C438S212000, C438S270000, C438S279000, C438S587000, C438S138000
Reexamination Certificate
active
07456439
ABSTRACT:
A semiconductor device may comprise a plurality of memory cells. A memory cell may comprise a thyristor, at least a portion of which is formed in a pillar of semiconductor material. The pillar may comprise sidewalls defining a cylindrical circumference of a first diameter. In a particular embodiment, the pillars associated with the plurality of memory cells may define rows and columns of an array. In a further embodiment, a pillar may be spaced by a first distance of magnitude up to the first diameter relative to a neighboring pillar within its row. In an additional further embodiment, the pillar may be spaced by a second distance of a magnitude up to twice the first diameter, relative to a neighboring pillar within its column.
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Chiu Tsz K
Fields IP, PS
T-RAM Semiconductor, Inc.
Wilczewski M.
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