Vertical thyristor-based memory with trench isolation and...

Details Vertical thyristor-based memory with trench isolation and... Vertical thyristor-based memory with trench isolation and...

2011-03-01

2011-03-01

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S133000, C438S270000, C257S107000, C257S133000, C257SE29115, C257SE29211, C257SE27079, C365S174000, C365S180000, C365S182000

Reexamination Certificate

active

07897440

ABSTRACT:
A semiconductor device may comprise a plurality of memory cells. A memory cell may comprise a thyristor, at least a portion of which is formed in a pillar of semiconductor material. The pillar may comprise sidewalls defining a cylindrical circumference of a first diameter. In a particular embodiment, the pillars associated with the plurality of memory cells may define rows and columns of an array. In a further embodiment, a pillar may be spaced by a first distance of magnitude up to the first diameter relative to a neighboring pillar within its row. In an additional further embodiment, the pillar may be spaced by a second distance of a magnitude up to twice the first diameter, relative to a neighboring pillar within its column.

REFERENCES:
patent: 5684306 (1997-11-01), Iwamuro
patent: 5844259 (1998-12-01), Kinzer et al.
patent: 6225165 (2001-05-01), Noble et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6690038 (2004-02-01), Cho et al.
patent: 2002/0053696 (2002-05-01), Iwamuro et al.

Affiliated with

Also associated with

Rating

Vertical thyristor-based memory with trench isolation and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical thyristor-based memory with trench isolation and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical thyristor-based memory with trench isolation and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2644159