Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-09-01
1997-07-29
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257184, 257449, 257453, H01L 3100
Patent
active
056524358
ABSTRACT:
A vertical structure Schottky contact photodiode has a narrow bandgap InGaAs light absorbing layer cladded front and back with InAlAs current blocking layers having metal contacts formed thereon. As compared to single-side MSM photodiodes, with interdigitated electrodes lying in a single plane, response time is improved due to reduced spacing between the electrodes. Response time is also improved since capacitance is reduced due to inherently low doping levels in the semiconductor material. Laterally offset finger electrodes are made light reflective to increase the production of carriers in the InGaAs absorption layer.
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Martin Eric A.
Spaziani Stephen M.
Vaccaro Kenneth
Mintel William
Nathans Robert L.
The United States of America as represented by the Secretary of
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