Vertical spin transistor and method of manufacturing the same

Details Vertical spin transistor and method of manufacturing the same Vertical spin transistor and method of manufacturing the same

2007-09-14

2009-12-08

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE21410, C257SE29323, C438S003000

Reexamination Certificate

active

07629658

ABSTRACT:
A vertical spin transistor according to an embodiment of the present invention includes: a first source/drain layer including a layer formed of magnetic material; a protruding structure including, a channel layer formed on the first source/drain layer and including a layer formed of semiconductor, and a second source/drain layer formed on the channel layer and including a layer formed of magnetic material; a gate insulating film formed on a side of the channel layer; and a gate electrode formed on a surface of the gate insulating film.

REFERENCES:
patent: 6369438 (2002-04-01), Sugiyama et al.
patent: 6607948 (2003-08-01), Sugiyama et al.
patent: 6855564 (2005-02-01), Cha
patent: 2006/0118839 (2006-06-01), Sugahara et al.
patent: 2009/0039401 (2009-02-01), Tanaka et al.
patent: 10-22501 (1998-01-01), None

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