Vertical semiconductor furnace

Details Vertical semiconductor furnace Vertical semiconductor furnace

1981-12-28

1983-11-01

Camby, John J.

Heating

Work chamber having heating means

Having means by which work is progressed or moved mechanically

432 11, 432 26, 432253, F27B 900, F27B 322, F27D 500

Patent

active

044128126

ABSTRACT:
A furnace (100) is provided which aids in the reduction of polysilicon and quartz contaminants during polysilicon deposition on monocrystalline wafers. The wafers are heated for polysilicon deposition within the interior of a quartz tube (102) which is mounted so that the interior sidewalls are vertical and the tube opening is at the top of the furnace. A quartz boat (104) is adapted for carrying the wafers in a spaced apart relationship with a quartz rod (144) maintaining the wafers within the boat when it is suspended vertically from an elevator bar (128). The elevator bar moves the quartz boat vertically into the interior of the quartz tube (102) for heating without contact between the quartz boat and sidewalls of the quartz tube. The level of contamination is therefore less and the yield of certain integrated circuits much improved.

REFERENCES:
patent: 3183130 (1965-05-01), Reynolds et al.
patent: 3493220 (1970-02-01), Kagdis et al.
patent: 3737282 (1973-06-01), Hearn et al.
patent: 3811825 (1974-05-01), Enderlein
patent: 4153164 (1979-05-01), Hofmeister et al.

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