Vertical semiconductor device

Details Vertical semiconductor device Vertical semiconductor device

1992-11-04

1994-11-22

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257 39, 257135, 257136, 257263, 257328, 257347, 257352, 257505, 257507, 257510, 257520, 257573, 257587, 257661, 257663, 257781, H01L 2348, H01L 2700, H01L 2940, H01L 4902

Patent

active

053671899

ABSTRACT:
A semiconductor device comprises a first electrode buried in one main face of a substrate and surrounded by a first insulator, a field oxide film covering the surface of the first electrode, a semiconductor layer connected with the first electrode, a second insulator covering the surface of the semiconductor layer, a second electrode connected with the semiconductor layer, a gate electrode connected with the semiconductor layer between the second insulator and the field oxide film, and an outgoing electrode connected with the first electrode.

REFERENCES:
patent: 3579058 (1971-05-01), Armgarth
patent: 4870475 (1989-09-01), Endo et al.

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