Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1991-08-29
1994-04-19
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257379, 257516, 257536, H01L 2702
Patent
active
053048385
ABSTRACT:
A semiconductor device comprises a semiconductor substrate of a first conductivity type; an epitaxial layer of a second conductivity type formed on the semiconductor substrate; an impurity diffusion layer of the second conductivity type embedded between the semiconductor substrate and the epitaxial layer and having an impurity concentration greater than that of the epitaxial layer; a resistance region reaching the impurity diffusion layer from a surface of the epitaxial layer and extending substantially vertically to the surface of the epitaxial layer; an insulating film defining the resistance region; and a lead region selectively formed between the surface of the epitaxial layer and the impurity diffusion layer.
REFERENCES:
patent: 3729662 (1973-04-01), Langdon
patent: 3947299 (1976-03-01), Weijland et al.
patent: 4272776 (1981-06-01), Weijland et al.
patent: 4929996 (1990-05-01), Hutter
patent: 4933739 (1990-06-01), Harari
patent: 4979001 (1990-12-01), Alter
patent: 5027183 (1991-06-01), Dreps
Hille Rolf
NEC Corporation
Saadat Mahshid
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