Vertical punch-through cell

Details Vertical punch-through cell Vertical punch-through cell

1987-08-06

1989-02-28

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 51, 365183, H01L 2978

Patent

active

048090514

ABSTRACT:
The present invention provides a vertical punch-through cell comprising a silicon substrate, an epitaxial silicon layer overlying the substrate, an N+ buried column line formed at the interface between the substrate and the epitaxial layer, an N+ diffusion region formed above and spaced apart from the buried column line at the surface of the epitaxial layer, a field oxide layer formed over the epitaxial layer and having an contact opening formed therein over the N+ diffusion region, a polysilicon layer formed on the surface of the field oxide layer to extend through the contact opening to make contact with the N diffusion region, a layer of dielectric material formed over the polysilicon layer, and a layer of conductive material formed over the dielectric material.

REFERENCES:
patent: 4471368 (1984-09-01), Mohsen
patent: 4649406 (1987-03-01), Takemae
IBM Technical Disclosure Bulletin, vol. 15, #9, pp. 2887-2889 by Chang Feb. 1973.

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