Vertical power semiconductor component

Details Vertical power semiconductor component Vertical power semiconductor component

2007-06-19

2007-06-19

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Emitter region feature

C257SE29197, C257SE29198, C257SE29199

Reexamination Certificate

active

10886007

ABSTRACT:
A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.

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