Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2005-06-07
2005-06-07
Nguyen, Van Thu (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S500000
Reexamination Certificate
active
06903435
ABSTRACT:
A vertical power component on a silicon wafer, including a lightly-doped epitaxial layer of a second conductivity type on the upper surface of a heavily-doped substrate of a first conductivity type, the epitaxial layer having a thickness adapted to withstanding the maximum voltage likely to be applied to the power component during its operation; and an isolating wall formed by etching a trench through the epitaxial layer and diffusing from this trench a dopant of the first conductivity type of high doping level.
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Auriel Gérard
Cornibert Laurent
Jorgenson Lisa K.
Morris James H.
Nguyen Van Thu
Smith Brad
STMicroelectronics S.A.
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