Vertical polysilicon diode compatible with CMOS/BiCMOS integrate

Details Vertical polysilicon diode compatible with CMOS/BiCMOS integrate Vertical polysilicon diode compatible with CMOS/BiCMOS integrate

1997-10-29

1999-11-09

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Including additional component in same, non-isolated structure

257518, 257528, 257532, H01L 27082, H01L 2970, H01L 3111

Patent

active

059820217

ABSTRACT:
A junction diode structure formed within an integrated circuit. The junction diode structure comprises a semiconductor substrate. The junction diode structure also comprises a dielectric layer formed over the semiconductor substrate. In addition, the junction diode structure also comprises a first polysilicon layer formed upon the dielectric layer, where the first polysilicon layer has a first dopant polarity and a first dopant concentration. Finally, the junction diode structure comprises a second polysilicon layer formed at least in part overlapping and at least in part in contact with the first polysilicon layer. The second polysilicon layer has a second dopant polarity and a second dopant concentration, where the second dopant polarity is opposite to the first dopant polarity, and where a first portion of the second polysilicon layer overlapping and in contact with a first portion of the first polysilicon layer forms a junction diode within the junction diode structure. The junction diode structure is particularly useful in forming junction diodes with increased junction area within integrated circuits.

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