Vertical PNP power device with different ballastic resistant ver

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Emitter region feature

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Details

257164, 257536, 257539, 257542, 257563, 257564, 257580, 257582, 257584, H01L 27082, H01L 27102, H01L 2970

Patent

active

057367558

ABSTRACT:
Disclosed are devices having emitters having resistive emitter diffusion sections are in a radial pattern. Such devices include vertical PNP power devices. The radial pattern of holes defines resistive emitter diffusion sections between adjacent holes. The resistive emitter diffusion sections result in a lower emitter ballast resistance due to the higher emitter sheet resistance of PNP devices. This allows all the periphery of the emitter to be active, not just two sides. The device has improved emitter ballast resistance while at the same time remaining efficient with low saturation resistance.

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