Vertical photodiode with heavily-doped regions of...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S074000, C438S075000, C257S465000

Reexamination Certificate

active

07105373

ABSTRACT:
A single junction interdigitated photodiode utilizes a stack of alternating highly doped first regions of a first conductivity type and highly doped second regions of a second conductivity type, which are formed below and contact the first regions, to collect photons. In addition, a highly doped sinker of a first conductivity type contacts each first region, and a highly doped sinker of a second conductivity type contacts each second region.

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