Vertical P-N junction device and method of forming same

Details Vertical P-N junction device and method of forming same Vertical P-N junction device and method of forming same

2008-06-25

2010-06-08

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

C257S302000, C257SE27112

Reexamination Certificate

active

07732835

ABSTRACT:
A P-N junction device and method of forming the same are disclosed. The P-N junction device may include a P-N diode, a PiN diode or a thyristor. The P-N junction device may have a monocrystalline or polycrystalline raised anode. In one embodiment, the P-N junction device results in a raised polycrystalline silicon germanium (SiGe) anode. In another embodiment, the P-N junction device includes a first terminal (anode) including a conductor layer positioned above an upper surface of a substrate and a remaining structure positioned in the substrate, the first terminal positioned over an opening in an isolation region; and a second terminal (cathode contact) positioned over the opening in the isolation region adjacent the first terminal. This latter embodiment reduces parasitic resistance and capacitance, and decreases the required size of a cathode implant area since the cathode contact is within the same STI opening as the anode.

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