Vertical optical cavities produced with selective area epitaxy

Details Vertical optical cavities produced with selective area epitaxy Vertical optical cavities produced with selective area epitaxy

1998-03-30

1999-09-28

Bovernick, Rodney

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, 372 45, H01S 319

Patent

active

059600241

ABSTRACT:
A monolithic vertical optical cavity device built up along a vertical direction. The device has a bottom Distributed Bragg Reflector (DBR), a Quantum Well (QW) region consisting of least one active layer grown on top of the bottom DBR by using a Selective Area Epitaxy (SAE) mask such that the active layer or layers exhibit a variation in at least one physical parameter in a horizontal plane perpendicular to the vertical direction and a top DBR deposited on top of the QW region. A spacer is deposited with or without SAE adjacent the QW region. The device has a variable Fabry-Perot distance defined along the vertical direction between the bottom DBR and the top DBR and a variable physical parameter of the active layer. The varying physical parameter of the active layers is either their surface curvature and/or the band gap and both of these parameters are regulated by SAE. The monolithic vertical cavity device can be used as a Vertical Cavity Surface Emitting Laser (VCSEL) or a Vertical Cavity Detector (VCDET).

REFERENCES:
patent: 5418183 (1995-05-01), Joyner et al.
patent: 5446752 (1995-08-01), Ackley et al.
patent: 5614436 (1997-03-01), Shim et al.
patent: 5659640 (1997-08-01), Joyner
patent: 5677924 (1997-10-01), Bestwick
patent: 5812577 (1998-09-01), Dawson et al.

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