Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2009-08-20
2010-11-23
Bryant, Kiesha R (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S046000, C438S706000
Reexamination Certificate
active
07838317
ABSTRACT:
A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
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Baik Doo Go
Choi Seok Beom
Jang Tae Sung
Lee Su Yeol
Woo Jong Gun
Bryant Kiesha R
Lowe Hauptman & Ham & Berner, LLP
Samsung LED Co., Ltd.
Yang Minchul
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