Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2007-08-07
2009-12-22
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257S024000, C257S346000, C257SE51040, C977S938000, C977S940000
Reexamination Certificate
active
07635856
ABSTRACT:
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
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patent: 6740910 (2004-05-01), Roesner et al.
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patent: 1 124 262 (2001-08-01), None
Richard Martel, et al., “Carbon Nanotube Field Effect Transistors for Logic Applications,” pp. 7.5.1-7.5.4, 2001, IEEE.
J.W. Park, et al., “Effects of Artificial Defects on the Electrical Transport of Single-Walled Carbon Nanotubes,” pp. 133-135, vol. 80, No. 1, Jan. 7, 2002.
Appenzeller Joerg
Avouris Phaedon
Chan Kevin K.
Collins Philip G.
Martel Richard
F. Chau & Associates LLC
Hu Shouxiang
International Business Machines - Corporation
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