Vertical MOSFET having penetrating wiring layers

Details Vertical MOSFET having penetrating wiring layers Vertical MOSFET having penetrating wiring layers

1998-09-24

2000-02-15

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257341, H01L 2941

Patent

active

06025646&

ABSTRACT:
There is provided an insulating gate type semiconductor device including (a) a semiconductor region defining a cell region and a field region, the cell region including a drain region, a base region, and a source region, a first recess being formed throughout the source region and reaching an intermediate depth of the base region, (b) a gate insulating film partially covering an exposed surface of the source region therewith, entirely covering an exposed surface of the base region, and partially covering an exposed surface of the drain region therewith, (c) a gate electrode formed on the gate insulating film, (d) a field insulating film formed on the semiconductor region in the field region, (e) a first gate wiring layer formed on the field insulating film in electrical connection with the gate electrode, the first gate wiring layer being formed with a second recess, (f) a source electrode in electrical isolation from the gate electrode, but in electrical connection with both an inner surface of the first recess and a part of a surface of the base region, and (g) a second gate wiring layer in electrical connection with both an inner surface of the second recess and a part of a surface of the first gate wiring layer. The insulating gate type semiconductor device makes it possible to form a contact with a source electrode and a contact with a gate wiring layer in a single step without an increase in the number of steps of forming a photoresist film pattern.

REFERENCES:
patent: 4423547 (1984-01-01), Farrar et al.
patent: 4502069 (1985-02-01), Schuh
patent: 4785344 (1988-11-01), Franz
patent: 4853341 (1989-08-01), Nishioka et al.
patent: 4902377 (1990-02-01), Berglund et al.
patent: 5304837 (1994-04-01), Hierold
patent: 5444020 (1995-08-01), Lee et al.
patent: 5525544 (1996-06-01), Kariyazono et al.
patent: 5561327 (1996-10-01), Jun
patent: 5828263 (1998-10-01), Gantioler et al.
patent: 5925911 (1999-07-01), Okabe et al.

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